Browsing by Author "Kasapoglu, Esin"
Now showing items 1-9 of 9
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The diamagnetic susceptibilities of donors in quantum wells with anisotropic effective mass
Kasapoglu, Esin; Ungan, Fatih; Sari, Hueseyin; Soekmen, Ismail (ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD, 2009)The diamagnetic susceptibility of a hydrogenic donor placed in Si, Ge and GaAs quantum wells with infinite confinement potential which have different effective mass anisotropy parameters (gamma = m(perpendicular to)L/m(parallel ... -
The effect of magnetic field on the impurity binding energy of shallow donor impurities in a Ga1-xInxNyAs1-y/GaAs quantum well
Yesilgul, Unal; Ungan, Fatih; Sakiroglu, Serpil; Duque, Carlos; Mora-Ramos, Miguel; Kasapoglu, Esin; Sari, Huseyin; Sokmen, Ismail (SPRINGER, 2012)Using a variational approach, we have investigated the effects of the magnetic field, the impurity position, and the nitrogen and indium concentrations on impurity binding energy in a Ga1-x In (x) N (y) As1-y /GaAs quantum ... -
Effect of the High-Frequency Laser Radiation on the Nonlinear Optical Properties of n-Type Double delta-Doped GaAs Quantum Wells
Ungan, Fatih; Sari, Huseyin; Kasapoglu, Esin; Yesilgul, Unal; Sakiroglu, Serpil; Sokmen, Ismail (AMER SCIENTIFIC PUBLISHERS, 2019)In the present work, the effect of non-resonant intense laser field on the nonlinear optical rectification and second and third harmonic generation of n-type double delta-doped GaAs quantum well is studied in detail. The ... -
Effects of an intense, high-frequency laser field on bound states in Ga1-xInxNyAs1-y/GaAs double quantum well
Ungan, Fatih; Yesilgul, Unal; Sakiroglu, Serpil; Kasapoglu, Esin; Erol, Ayse; Arikan, Mehmet Cetin; Sari, Huseyin; Sokmen, Ismail (SPRINGER, 2012)Within the envelope function approach and the effective-mass approximation, we have investigated theoretically the effect of an intense, high-frequency laser field on the bound states in a Ga (x) In1 - x N (y) As1 - y /GaAs ... -
Electron and donor-impurity-related Raman scattering and Raman gain in triangular quantum dots under an applied electric field
Tiutiunnyk, Anton; Akimov, Volodymyr; Tulupenko, Viktor; Mora-Ramos, Miguel E.; Kasapoglu, Esin; Morales, Alvaro L.; Alberto Duque, Carlos (SPRINGER, 2016)The differential cross-section of electron Raman scattering and the Raman gain are calculated and analysed in the case of prismatic quantum dots with equilateral triangle base shape. The study takes into account their ... -
Inter-sub-band transitions and binding energies of donor impurities in a modulation-doped quantum well in the presence of electric field
Ungan, Fatih; Kasapoglu, Esin; Sari, Hueseyin; Soekmen, Ismail (ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD, 2009)In this study, we have investigated theoretically the effects of the electric field and doping concentration on the optical transitions in a modulation-doped GaAs-AlGaAs quantum well for different well widths. The binding ... -
Nonlinear optical properties of asymmetric n-type double delta-doped GaAs quantum well under intense laser field
Sari, Huseyin; Kasapoglu, Esin; Yesilgul, Unal; Sakiroglu, Serpil; Ungan, Fatih; Sokmen, Ismail (SPRINGER, 2017)The effect of non-resonant intense laser field on the intersubband-related optical absorption coefficient and refractive index change in the asymmetric n-type double delta-doped GaAs quantum well is theoretically investigated. ... -
Optical Absorption and Electroabsorption Related to Electronic and Single Dopant Transitions in Holey Elliptical GaAs Quantum Dots
Alejandro Vinasco, Juan; Alejandro Londono, Mauricio; Leon Restrepo, Ricardo; Eduardo Mora-Ramos, Miguel; Feddi, El Mustapha; Radu, Adrian; Kasapoglu, Esin; Luis Morales, Alvaro; Alberto Duque, Carlos (WILEY-V C H VERLAG GMBH, 2018)The electron states in a holey elliptically shaped GaAs quantum dot are investigated within the effective mass scheme with the use of the adiabatic approximation and the finite element method. The effects of a donor impurity ...